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Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

preprint2012arXivOpen access
C. D. WeisC. C. LoV. LangA. M. TyryshkinR. E. GeorgeK. M. YuJ. BokorS. A. LyonJ. J. L. MortonT. Schenkel
cond-mat.mtrl-sci
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C. D. WeisC. C. LoV. LangA. M. TyryshkinR. E. GeorgeK. M. YuJ. BokorS. A. LyonJ. J. L. MortonT. Schenkel

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