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Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

preprint2012arXivOpen access
Zhengping JiangNeerav KharcheTimothy BoykinGerhard Klimeck
cond-mat.mtrl-sciquant-ph
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Zhengping JiangNeerav KharcheTimothy BoykinGerhard Klimeck

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