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Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

preprint2012arXivOpen access
Yosuke HarashimaKeith Slevin
cond-mat.mtrl-scicond-mat.dis-nn
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Yosuke HarashimaKeith Slevin

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