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Dynamics of dissipative multiple exciton generation in nanocrystals

The population dynamics of single- and bi-exciton states in semiconductor nanocrystals is modeled numerically in the presence of Coulomb coupling between single- and two-exciton states and a dissipation channel in order to study the transient bi-exciton population that occurs in an optically excited semiconductor nanocrystal. The results show that the system evolution strongly changes if the dissipation is included. In a certain range of parameters, the growth of the exciton number (MEG process) is fast (on picosecond time scale) and the following decay (Auger process) is much slower (hundreds of picoseconds). In some cases, the maximum occupation of the bi-exciton state increases when dissipation is included. The dynamics of an ensemble of nanocrystals with a certain size dispersion is studied by averaging over the energy of the bi-exciton state which can be different for each single nanocrystal. The validity of Markov and secular approximation is also verified.