Discovery of Superconductivity in Nb4_4SiSb2_2 with a V4_4SiSb2_2-Type Structure and Implications of Interstitial Doping on its Physical Properties

preprint2022arXivOpen access

Abstract

We report on the discovery, structural analysis, and the physical properties of Nb4_4SiSb2_2 -- a hitherto unknown compound crystallizing in the V4_4SiSb2_2-type structure with the tetragonal space group I4/mcmI4/mcm and unit cell parameters aa = 10.3638(2) A˚\mathring{\mathrm{A}} and cc = 4.9151(2) A˚\mathring{\mathrm{A}}. We find Nb4_4SiSb2_2 to be a metal undergoing a transition to a superconducting state at a critical temperature of Tc≈T_{\rm c} \approx 1.6 K. The bulk nature of the superconductivity in this material is confirmed by the observation of a well defined discontinuity in specific heat with a normalized specific heat jump of ΔC(Tc)/γTc=1.33 mJ mol−1 K−2ΔC(T_{\rm c})/γT_{\rm c} = 1.33\, {\rm mJ}\, {\rm mol}^{-1}\, {\rm K}^{-2}. We find that for Nb4_4SiSb2_2, the unoccupied sites on the 4b4b Wyckoff position can be partially occupied with Cu, Pd, or Pt. Low-temperature resistivity measurements show transitions to superconductivity for all three compounds at Tc≈ 1.2 KT_{\rm c} \approx\, 1.2\, {\rm K} for Nb4_4Cu0.2_{0.2}SiSb2_2, and Tc≈ 0.8 KT_{\rm c} \approx\, 0.8\, {\rm K} for Nb4_4Pd0.2_{0.2}SiSb2_2 as well as for Nb4_4Pt0.14_{0.14}SiSb2_2. The addition of electron-donor atoms into these void positions, henceforth, lowers the superconducting transition temperature in comparison to the parent compound.

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