Abstract

We propose that Dirac cones can be engineered in phosphorene with fourfold-coordinated phosphorus atom. The key is to separate in energy the in-plane (ss, pxp_x and pyp_y) and out-of-plane (pzp_z) oribtals through the sp2sp^2 configuration, yielding respective σσ- and ππ-character Dirac cones, and then quench the latter. As a proof-of-principle study, we realize σσ-character Dirac cone in hydrogenated/fluorinated phosphorene with the honeycomb lattice. The obtained Dirac cones are at KK-points, slightly anisotropic, with Fermi velocities of 0.91/1.23 times that of graphene along ΓΓK/KM direction, and maintain a good linearity up to ∼\sim2 eV for holes. One substantive advantage of σσ-character Dirac cone is its convenience to tune the Dirac gap via in-plane strain. Our findings pave a new way for development of high performance electronic devices based on Dirac materials.

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