Abstract
Various-thickness Ag islands were prepared on Si(111)-77 using the one-step deposition at a high substrate temperature. An electronic state centered at -0.40-0.15eV versus E, detectable on the surface of the Ag islands thinner than 9 layers, was created by the electronic hybridization between Ag and Si at the Ag-Si interface. Scanning tunneling microscopy/spectroscopy and density functional theory revealed that the thickness of Ag islands determined the strength of the hybridization, leading to a modulation to the energy and intensity of the state on the surface.
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