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Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP

We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.

preprint2010arXivOpen access
T. E. WinklerP. R. StoneTian LiK. M. YuA. BonanniO. D. Dubon
cond-mat.mtrl-sci
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T. E. WinklerP. R. StoneTian LiK. M. YuA. BonanniO. D. Dubon

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