Abstract
This paper presents the characterization of microwave passive components, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperature (4.2 K). The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters and the resulting insights on modeling of passives at cryogenic temperatures are provided. Both characterization and modeling, reported for the first time down to 4.2 K, are essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.
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