Abstract
We investigated poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61 butyric acid methyl ester bulk heterojunction (BHJ) solar cells by means of pulsed photocurrent, temperature dependent current-voltage and capacitance-voltage measurements. We show that a direct transfer of Mott-Schottky (MS) analysis from inorganic devices to organic BHJ solar cells is not generally appropriate to determine the built-in potential, since the resulting potential depends on the active layer thickness. Pulsed photocurrent measurements enabled us to directly study the case of quasi flat bands (QFB) in the bulk of the solar cell. It is well below the built-in potential and differs by diffusion-induced band-bending at the contacts. In contrast to MS analysis the corresponding potential is independent on the active layer thickness and therefore a better measure for flat band conditions in the bulk of a BHJ solar cell as compared to MS analysis.
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