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Paper detail

Bilayer graphene dual-gate nanodevice: An ab initio simulation

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping.

preprint2011arXivOpen access
J. E. PadilhaMatheus P. LimaA. J. R. da SilvaA. Fazzio
cond-mat.mes-hall
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J. E. PadilhaMatheus P. LimaA. J. R. da SilvaA. Fazzio

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