Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

preprint2016arXivOpen access

A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k $\cdot$ p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells.

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Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

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