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Ambipolar tunneling in near-surface quantum wells

We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling currents for electrons and holes. The field induces a Stark shift of the photoluminescence signal which compares well with experimental data from near-surface GaAs/AlGaAs single quantum wells.

preprint1997arXivOpen access
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