Abstract
A charge-carrier reservoir is necessary for electrostatic control of the carrier concentration in a solid. The source/drain electrodes serve as carrier reservoirs in a field-effect transistor, but it is still unknown what serves as a reservoir in a technique based on a polar self-assembled monolayer formed underneath a solid to be controlled. Here, the carrier-doping level of isolated single-layer graphene was found to be the same as that of the single-layer part in a flake containing multilayer graphene, indicating that the multilayer part is not a dominant carrier reservoir but adsorbates like oxygen and water serve as a dominant reservoir.
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