Abstract
Here we propose to induce magnetism in semiconductor utilizing the unique properties of the interstitial defect to act as the magnetic impurity within the alpha-PbO crystal structure. The Pbi interstitial generates the p-localized state with two on-site electrons to obey the Hund's rule for their ordering. It is demonstrated that instead of Pb interstitial other non-magnetic impurities of s^2p^{x} outer shell configuration can be applied to induce d0 magnetism with possibility to tune the local magnetic moments mu_B by varying a number of electrons 1< x< 3. The magnetic coupling between such defects is found to be driven by the long-range order interactions that in combination with high defect solubility promises the magnetic percolation to remain above the room temperature.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.