Abstract
Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor states, localized on pairs of neighbor dopants (impurity "dumbbells"), in order to describe boron doped diamond CB. The resulting parameters of band structure, in particular, position of the Fermi level, are compared to the recent experimental data on metallized and superconducting CB.
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