Abstract
The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to high-k materials, while keeping the structure as before, is not a good solution. Based on our analysis, we proposed a novel structure, in which charges are injected from top gate electrode. In this structure, high charge injection, large memory window and long retention time can be expected.
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