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A New Methodology for Radiation Effects Studies in Solids using the Plasma Focused Ion Beam

A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a proof-of-concept experiment that delineates the advantages and limitations of this new technique. We demonstrate both the feasibility and invention of a new ion irradiation mode consisting of irradiating a single-specimen in multiple areas, at multiple doses, in specific sites. This present methodology suggests a very precise control of the ion beam over the specimen, with an error in the flux on the order of only 1%. In addition, the proposed methodology allows the irradiation of specimens with higher dose rates when compared with conventional ion accelerators and implanters. This methodology is expected to open new research frontiers beyond the scope of materials at extremes such as in nanopatterning and nanodevices fabrication.