Abstract
The present work is motivated by the development of a fast DG based deterministic solver for the extension of the BTE to a system of transport Boltzmann equations for full electronic multi-band transport with intra-band scattering mechanisms. Our proposed method allows to find scattering effects of high complexity, such as anisotropic electronic bands or full band computations, by simply using the standard routines of a suitable Monte Carlo approach only once. In this short paper, we restrict our presentation to the single band problem as it will be also valid in the multi-band system as well. We present preliminary numerical tests of this method using the Kane energy band model, for a 1-D 400nm silicon channel diode, showing moments at ps and ps.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.