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Yaohua Tan
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Yaohua Tan13 visible / 13 total nodes / 12 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipYaohua TanAYaohua TanResearcherEmpirical tight binding parameters for GaAs and MgO with explicit basis through DFT mappingWEmpirical tight binding...preprint / 2012Transferable tight binding model for strained group IV and III-V materials and heterostructuresWTransferable tight bind...preprint / 2016First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfoldingWFirst principles study ...preprint / 2016Biaxial Strain Modulated Valence Band Engineering in III-V Digital AlloysWBiaxial Strain Modulate...preprint / 2021Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide MaterialsWTunnel Field-Effect Tra...preprint / 2015Surface Passivation in Empirical Tight BindingWSurface Passivation in ...preprint / 2015A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt PhotodetectorsWA Multiscale Materials-...preprint / 2018Spin-lattice relaxation times of single donors and donor clusters in siliconWSpin-lattice relaxation...preprint / 2015Design principles for HgTe based topological insulator devicesWDesign principles for H...preprint / 2013Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructuresWProximity induced ferro...preprint / 2014In-surface confinement of topological insulator nanowire surface statesWIn-surface confinement ...preprint / 2016High-Performance Complementary III-V Tunnel FETs with Strain EngineeringWHigh-Performance Comple...preprint / 2016
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Yaohua Tan

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PaperEmpirical tight binding parameters for GaAs and MgO with explicit basis through DFT mappingAuthorship / preprint / 2012PaperTransferable tight binding model for strained group IV and III-V materials and heterostructuresAuthorship / preprint / 2016PaperFirst principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfoldingAuthorship / preprint / 2016PaperBiaxial Strain Modulated Valence Band Engineering in III-V Digital AlloysAuthorship / preprint / 2021PaperTunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide MaterialsAuthorship / preprint / 2015PaperSurface Passivation in Empirical Tight BindingAuthorship / preprint / 2015PaperA Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt PhotodetectorsAuthorship / preprint / 2018PaperSpin-lattice relaxation times of single donors and donor clusters in siliconAuthorship / preprint / 2015

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