BZPEER

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Vincent Guiot

Researcher

PaperResistive switching induced by electronic avalanche breakdown in GaTa $_4$ Se $_{8-x}$ Te $_x$ narrow gap Mott InsulatorsAuthorship / preprint / 2013 PaperBehavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculationsAuthorship / preprint / 2011 PaperElectric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM MemoriesAuthorship / preprint / 2013 PaperElectric pulse induced electronic patchwork in the Mott insulator GaTa $_{4}$ Se $_{8}$ Authorship / preprint / 2013 PaperUniversal electric-field-driven resistive transition in narrow-gap Mott insulatorsAuthorship / preprint / 2013