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Timur Flissikowski
Researcher
PaperCoupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowiresAuthorship / preprint / 2013PaperCarrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusionAuthorship / preprint / 2021PaperCoexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructureAuthorship / preprint / 2011PaperLuminescence associated with stacking faults in GaNAuthorship / preprint / 2014PaperExciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dotsAuthorship / preprint / 2016PaperNature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)Authorship / preprint / 2016PaperInterface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxyAuthorship / preprint / 2022PaperCarrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volumeAuthorship / preprint / 2021