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T. Pluym

Researcher

PaperEnhancement-mode buried strained silicon channel quantum dot with tunable lateral geometryAuthorship / preprint / 2011 PaperProbing limits of STM field emission patterned Si:P $δ$ -doped devicesAuthorship / preprint / 2014 PaperCryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistorAuthorship / preprint / 2015 PaperFabrication of quantum dots in undoped Si/Si $_{0.8}$ Ge $_{0.2}$ heterostructures using a single metal-gate layerAuthorship / preprint / 2016 PaperSpontaneous emission in a silicon charge qubitAuthorship / preprint / 2014 PaperImaging and registration of buried atomic-precision donor devices using scanning capacitance microscopyAuthorship / preprint / 2014 PaperSilicon Quantum Dots with Counted Antimony Donor ImplantsAuthorship / preprint / 2015