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Stefan Slesazeck
Researcher
PaperC-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET MemoryAuthorship / preprint / 2022PaperReduced leakage current in BiFeO3 thin films with rectifying contactsAuthorship / preprint / 2011PaperControl of rectifying and resistive switching behavior in BiFeO3 thin filmsAuthorship / preprint / 2011Paper2022 Roadmap on Neuromorphic Computing and EngineeringAuthorship / preprint / 2022PaperInvestigating charge trapping in ferroelectric thin films through transient measurementsAuthorship / preprint / 2022PaperSubstrate effect on the resistive switching in BiFeO3 thin filmsAuthorship / preprint / 2012PaperAntiferroelectric negative capacitance from a structural phase transition in zirconiaAuthorship / preprint / 2021