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Satoshi Sugahara
Researcher
PaperNonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching ArchitectureAuthorship / preprint / 2009PaperQuantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co-Ka and Cu-Ka sourcesAuthorship / preprint / 2010PaperAnalysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealingAuthorship / preprint / 2009PaperMagnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contactsAuthorship / preprint / 2010PaperCharacterization of half-metallic L2_1-phase Co_2FeSi full-Heusler alloy films formed by rapid thermal annealingAuthorship / preprint / 2007PaperEpitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealingAuthorship / preprint / 2010