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Patrick Fiorenza
Researcher
PaperIdentification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETsAuthorship / preprint / 2020PaperElectron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysisAuthorship / preprint / 2020PaperProcessing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMTAuthorship / preprint / 2020