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Lars Gundlach
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AuthorshipAuthorshipLars GundlachALars GundlachResearcherFmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealingWFmax = 270 GHz InAlN/Ga...preprint / 2020Light and microwave driven spin pumping across FeGaB-BiSb interfaceWLight and microwave dri...preprint / 2022
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Lars Gundlach

Researcher