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Kosuke Nagashio
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Kosuke Nagashio11 visible / 11 total nodes / 10 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipKosuke NagashioAKosuke NagashioResearcherDOS-limited contact resistance in graphene FETsWDOS-limited contact res...preprint / 2011Mobility variations in mono- and multi-layer graphene filmsWMobility variations in ...preprint / 2008Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FETWSystematic Investigatio...preprint / 2010The density of states of graphene underneath a metal electrode and its correlation with the contact resistivityWThe density of states o...preprint / 2013Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulatorsWLarge Fermi energy modu...preprint / 2014Gap state analysis in electric-field-induced band gap for bilayer grapheneWGap state analysis in e...preprint / 2015Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer DepositionWBuffer Layer Engineerin...preprint / 2016Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristicsWExperimental detection ...preprint / 2016Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron NitrideWAnisotropic Dielectric ...preprint / 2016Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitrideWComparison of device st...preprint / 2016
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Kosuke Nagashio

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PaperDOS-limited contact resistance in graphene FETsAuthorship / preprint / 2011PaperMobility variations in mono- and multi-layer graphene filmsAuthorship / preprint / 2008PaperSystematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FETAuthorship / preprint / 2010PaperThe density of states of graphene underneath a metal electrode and its correlation with the contact resistivityAuthorship / preprint / 2013PaperLarge Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulatorsAuthorship / preprint / 2014PaperGap state analysis in electric-field-induced band gap for bilayer grapheneAuthorship / preprint / 2015PaperBuffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer DepositionAuthorship / preprint / 2016PaperExperimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristicsAuthorship / preprint / 2016

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