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Joerg Appenzeller
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Joerg Appenzeller13 visible / 13 total nodes / 12 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipJoerg AppenzellerAJoerg AppenzellerResearcherSub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric componentWSub-60 mV/decade switch...preprint / 2020Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and BenchmarkingWDesign Considerations f...preprint / 2022Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor DevicesWMobility Extraction and...preprint / 2008Scaling Theory of Electrically Doped 2D TransistorsWScaling Theory of Elect...preprint / 2015Design Rules for High Performance Tunnel Transistors from 2D MaterialsWDesign Rules for High P...preprint / 2016Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructureWDemonstration of a stra...preprint / 2019Signatures of disorder in the minimum conductivity of grapheneWSignatures of disorder ...preprint / 2011Substrate Gating of Contact Resistance in Graphene TransistorsWSubstrate Gating of Con...preprint / 2011Dielectric Engineered Tunnel Field-Effect TransistorWDielectric Engineered T...preprint / 2015Hardware implementation of Bayesian network building blocks with stochastic spintronic devicesWHardware implementation...preprint / 2020A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function SimulationsWA Predictive Analytic M...preprint / 2015From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of TunnelingWFrom Fowler-Nordheim to...preprint / 2015
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Joerg Appenzeller

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PaperSub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric componentAuthorship / preprint / 2020PaperDesign Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and BenchmarkingAuthorship / preprint / 2022PaperMobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor DevicesAuthorship / preprint / 2008PaperScaling Theory of Electrically Doped 2D TransistorsAuthorship / preprint / 2015PaperDesign Rules for High Performance Tunnel Transistors from 2D MaterialsAuthorship / preprint / 2016PaperDemonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructureAuthorship / preprint / 2019PaperSignatures of disorder in the minimum conductivity of grapheneAuthorship / preprint / 2011PaperSubstrate Gating of Contact Resistance in Graphene TransistorsAuthorship / preprint / 2011

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