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J. Stangl
Researcher
PaperStrain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffractionAuthorship / preprint / 2010PaperDirect Bandgap Emission from Hexagonal Ge and SiGe AlloysAuthorship / preprint / 2019PaperSemiconductor quantum dots with light-hole exciton ground state: fabrication and fine structureAuthorship / preprint / 2012