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Ignasi Fina
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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipIgnasi FinaAIgnasi FinaResearcherFlexible antiferromagnetic FeRh tapes as memory elementsWFlexible antiferromagne...preprint / 2021Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PTWReversible and magnetic...preprint / 2020Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin filmsWFatigue and retention i...preprint / 2020Multiferroic Iron Oxide Thin Films at Room-TemperatureWMultiferroic Iron Oxide...preprint / 2014Selecting Steady and Transient Photocurrent Response in BaTiO3 FilmsWSelecting Steady and Tr...preprint / 2015High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ filmsWHigh polarization, endu...preprint / 2020Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)WDomain Matching Epitaxy...preprint / 2020Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctionsWStrain-controlled respo...preprint / 2016Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devicesWBlocking of conducting ...preprint / 2020Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7WDiscovery of highly-pol...preprint / 2020Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin FilmsWCritical Effect of Bott...preprint / 2021Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctionsWUnraveling ferroelectri...preprint / 2020
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Ignasi Fina

Researcher