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Francisco Pasadas
Researcher
PaperCompact modeling technology for the simulation of integrated circuits based on graphene field-effect transistorsAuthorship / preprint / 2022PaperNon-quasi-static effects in graphene field-effect transistors under high-frequency operationAuthorship / preprint / 2020PaperLarge-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitancesAuthorship / preprint / 2020PaperLarge-signal model of the Metal-Insulator-Graphene diode targeting RF applicationsAuthorship / preprint / 2019PaperSmall-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitancesAuthorship / preprint / 2017PaperLarge-Signal Model of Graphene Field-Effect Transistors -- Part II: Circuit Performance BenchmarkingAuthorship / preprint / 2016PaperLarge-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic CapacitancesAuthorship / preprint / 2016PaperDoes carrier velocity saturation help to enhance fmax in graphene field-effect transistors?Authorship / preprint / 2019