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Carsten Pfüller
Researcher
PaperNature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)Authorship / preprint / 2016PaperLuminescence of GaAs nanowires consisting of wurtzite and zincblende segmentsAuthorship / preprint / 2012PaperCoexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructureAuthorship / preprint / 2011PaperDirect experimental determination of the spontaneous polarization of GaNAuthorship / preprint / 2012PaperMolecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foilAuthorship / preprint / 2016PaperCarrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusionAuthorship / preprint / 2021PaperBismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dotsAuthorship / preprint / 2019PaperCarrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volumeAuthorship / preprint / 2021