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Arkka Bhattacharyya
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Arkka Bhattacharyya12 visible / 12 total nodes / 11 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipArkka BhattacharyyaAArkka BhattacharyyaResearcher4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$W4.4 kV $β$-Ga$_2$O$_3$ ...preprint / 2022Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer DielectricWSchottky Barrier Height...preprint / 2020High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$WHigh Permittivity Diele...preprint / 2021Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure ChannelsWGrowth and Characteriza...preprint / 2020Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction StructuresWAnalytical Modeling and...preprint / 2020Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxyWDelta-doped \b{eta}-Ga2...preprint / 2020Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ FilmsWLow Resistance Ohmic Co...preprint / 2022In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor DepositionWIn-situ dielectric Al2O...preprint / 2021Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystalsWDefect states and their...preprint / 2020Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-dopingWDegenerate doping in \b...preprint / 2020MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructuresWMOVPE-grown Si-doped \b...preprint / 2019
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Arkka Bhattacharyya

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Paper4.4 kV ββ-Ga2_2O3_3 Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2^2Authorship / preprint / 2022PaperSchottky Barrier Height Engineering In ββ-Ga2_2O3_3 Using SiO2_2 Interlayer DielectricAuthorship / preprint / 2020PaperHigh Permittivity Dielectric Field-Plated Vertical (001) ββ-Ga2_2O3_3 Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of >> 1 GW/cm2^{2}Authorship / preprint / 2021PaperGrowth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure ChannelsAuthorship / preprint / 2020PaperAnalytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction StructuresAuthorship / preprint / 2020PaperDelta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxyAuthorship / preprint / 2020PaperLow Resistance Ohmic Contact On Epitaxial MOVPE-grown ββ-Ga2_2O3_3 and ββ-(Alx_xGa1−x_1-x)2_2 O3_3 FilmsAuthorship / preprint / 2022PaperIn-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor DepositionAuthorship / preprint / 2021

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