Researcher profile

Zongxiang Hu

Zongxiang Hu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Designing light-element materials with large effective spin-orbit coupling

Spin-orbit coupling (SOC), the core of numerous condensed-matter phenomena such as nontrivial band gap, magnetocrystalline anisotropy, etc, is generally considered to be appreciable only in heavy elements, detrimental to the synthetization and application of functional materials. Therefore, amplifying the SOC effect in light elements is of great importance. Here, focusing on 3d and 4d systems, we demonstrate that the interplay between crystal symmetry and electron correlation can dramatically enhance the SOC effect in certain partially occupied orbital multiplets, through the self-consistently reinforced orbital polarization as a pivot. We then provide design principles and comprehensive databases, in which we list all the Wyckoff positions and site symmetries, in all two-dimensional (2D) and three-dimensional crystals that potentially have such enhanced SOC effect. As an important demonstration, we predict nine material candidates from our selected 2D material pool as high-temperature quantum anomalous Hall insulators with large nontrivial band gaps of hundreds of meV. Our work provides an efficient and straightforward way to predict promising SOC-active materials, releasing the burden of requiring heavy elements for next-generation spin-orbitronic materials and devices.

preprint2022arXiv

Rational design of large anomalous Nernst effect in Dirac semimetals

Anomalous Nernst effect generates a transverse voltage perpendicular to the temperature gradient. It has several advantages compared with the longitudinal thermoelectricity for energy conversion, such as decoupling of electronic and thermal transports, higher flexibility, and simpler lateral structure. However, a design principle beyond specific materials systems for obtaining a large anomalous Nernst conductivity (ANC) is still absent. In this work, we theoretically demonstrate that a pair of Dirac nodes under a Zeeman field manifests a double-peak anomalous Hall conductivity curve with respect to the chemical potential and a compensated carriers feature, leading to an enhanced ANC pinning at the Fermi level compared with that of a simple Weyl semimetal with two Weyl nodes. Based on first-principles calculations, we then provide two Dirac semimetal candidates, i.e., Na3Bi and NaTeAu, and show that under a Zeeman field they exhibit a sizable ANC value of 0.4 A/(m*K) and 1.3 A/(m*K), respectively, near the Fermi level. Our work provides a design principle with a prototype band structure for enhanced ANC pinning at Fermi level, shedding light on the inverse design of other specific functional materials base on electronic structure.