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Zhimei Sun

Zhimei Sun appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2020arXiv

First principles investigation on anomalous lattice shrinkage of W alloyed rock salt GeTe

According to Vegard's law, larger radius atoms substitute for smaller atoms in a solid solution would enlarge the lattice parameters. However, by first-principles calculations, we have observed unusual lattice shrinkage when W replaces Ge in rock salt GeTe. We attribute this anomalous contract to the larger electronegativity difference between W and Te than between Ge and Te, which results in shorter W-Te bonds and pronounced local distortion around W dopants. The present work would provide new insight into the lattice parameter determination and a deeper understanding of the structural properties of ternary solid solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Insight into the Role of Oxygen in Phase-Change Material GeTe

Oxygen is widely used to tune the performance of chalcogenide phase-change materials in the usage of phase-Change random access memory (PCRAM) which is considered as the most promising next-generation non-volatile memory. However, the microscopic role of oxygen in the write-erase process, i.e., the reversible phase transition between crystalline and amorphous state of phase-change materials is not clear yet. Using oxygen doped GeTe as an example, this work unravels the role of oxygen at the atomic scale by means of ab initio total energy calculations and ab initio molecular dynamics simulations. Our main finding is that after the amorphization and the subsequent re-crystallization process simulated by ab initio molecular dynamics, oxygen will drag one Ge atom out of its lattice site and both atoms stay in the interstitial region near the Te vacancy that was originally occupied by the oxygen, forming a "dumbbell-like" defect (O-VTe-Ge), which is in sharp contrast to the results of ab initio total energy calculations at 0 K showing that the oxygen prefers to substitute Te in crystalline GeTe. This specific defect configuration is found to be responsible for the slower crystallization speed and hence the improved data retention of oxygen doped GeTe as reported in recent experimental work. Moreover, we find that the oxygen will increase the effective mass of the carrier and thus increases the resistivity of GeTe. Our results unravel the microscopic mechanism of the oxygen-doping optimization of phase-change material GeTe, and the present reported mechanism can be applied to other oxygen doped ternary chalcogenide phase-change materials.

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preprint2015arXiv

Mechanical properties and electronic structure of the incompressible rhenium carbides and nitrides: A first-principles study

By means of first-principles calculations, the structural stability, mechanical properties and electronic structure of the newly synthesized incompressible Re2C, Re2N, Re3N and an analogous compound Re3C have been investigated. Our results agree well with the available experimental and theoretical data. The proposed Re3C is shown to be energetically, mechanically and dynamically stable and also incompressible. Furthermore, it is suggested that the incompressibility of these compounds is originated from the strong covalent bonding character with the hybridization of 5d orbital of Re and the 2p orbital of C or N, and a zigzag topology of interconnected bonds, e.g., Re-Re, Re-C or Re-N bonding.

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preprint2015arXiv

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task. Here, a new structure with the TaO2 formula was predicted using evolutionary algorithms in combination with first-principles calculations. This new structure having a triclinic symmetry (T-TaO2) is both energetically and dynamically more favorable than the commonly believed rutile structure (R-TaO2). Our hybrid functional calculations show that T-TaO2 is a semiconductor with a band gap of 1.0 eV, while R-TaO2 is a metallic conductor. This large difference in electrical property makes TaO2 a potential candidate for resistance random access memory (RRAM). Furthermore, we have shown that T-TaO2 is actually a Peierls distorted R-TaO2 phase and the transition between these two structures is via a directional displacement of Ta atoms. The energy barrier for the reversible phase transition from R-TaO2 to T-TaO2 is 0.19 eV/atom and the other way around is 0.23 eV/atom, suggesting low power consumption for the resistance switch. The present findings provide a new mechanism for the resistance switch and will also stimulate experimental work to fabricate tantalum oxides based RRAM.

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preprint2015arXiv

The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene

Artificial monolayer black phosphorus, the so-called phosphorene has attracted global interest with its distinguished anisotropic optoelectronic and electronic properties. Here, we unraveled the shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene based on first-principles calculations. Lattice dynamic analysis demonstrated that phosphorene can sustain up to 10% applied shear strain. The band gap of phosphorene experiences a direct to indirect transition when 5% shear strain is applied. The electronic origin of direct to indirect gap transition from 1.54 eV at ambient condition to 1.22 eV at 10% shear strains for phosphorene was explored and the anisotropy diminution in phosphorene is discussed by calculating the maximum sound velocities, effective mass and decomposed charge density, which signals the undesired shear-induced direct to indirect gap transition in the applications of phosphorene for electronics and optoelectronics. On the other hand, the shear-induced electronic anisotropy properties suggest that phosphorene can be applied as the switcher in the nano electronic applications.

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preprint2015arXiv

Theoretical investigation on the transition metal borides with Ta3B4-type structure: a class of hard and refractory materials

Based on density functional theory, we have systematically studied the structural stability, mechanical properties and chemical bonding of the transition metal borides M3B4 (M=Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W) for the first time. All the present studied M3B4 have been demonstrated to be thermodynamically and mechanically stable. The bulk modulus, shear modulus, Young's modulus, Poisson's ratio, microhardness, Debye temperature and anisotropy have been derived for ideal polycrystalline M3B4 aggregates. In addition, the relationship between Debye temperature and microhardness has been discussed for these isostructral M3B4. Furthermore, the results of the Cauchy pressure, the ratio of bulk modulus to shear modulus, and Poisson's ratio suggest that the valence electrons of transition metals play an important role in the ductility of M3B4. The calculated total density of states for M3B4 indicates that all these borides display a metallic conductivity. By analyzing the electron localization function, we show that the improvement of the ductility in these M3B4 might attribute to the decrease of their angular bonding character.

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preprint2014arXiv

Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst

Phosphorene has been attracted intense interest due to its unexpected high carrier mobility and distinguished anisotropic optoelectronic and electronic properties. In this work, we unraveled strain engineered phosphorene as a photocatalyst in the application of water splitting hydrogen production based on density functional theory calculations. Lattice dynamic calculations demonstrated the stability for such kind of artificial materials under different strains. The phosphorene lattice is unstable under compression strains and could be crashed. Whereas, phosphorene lattice shows very good stability under tensile strains. Further guarantee of the stability of phosphorene in liquid water is studied by ab initio molecular dynamics simulations. Tunable band gap from 1.54 eV at ambient condition to 1.82 eV under tensile strains for phosphorene is evaluated using parameter-free hybrid functional calculations. Appropriate band gaps and band edge alignments at certain pH demonstrate the potential application of phosphorene as a sufficiently efficient photocatalyst for visible light water splitting. We found that the strained phosphorene exhibits significantly improved photocatalytic properties under visible-light irradiation by calculating optical absorption spectra. Negative splitting energy of absorbed H2O indicates the water splitting on phosphorene is energy favorable both without and with strains.

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