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Zhengyang Lyu

Zhengyang Lyu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2021arXiv

Spatiotemporally Controlled Room Temperature Exciton Transport under Dynamic Pressure

Two-dimensional transition metal dichalcogenides (TMDs) provide an attractive platform for studying strain dependent exciton transport at room temperature due to large exciton binding energy and strong bandgap sensitivity to mechanical stimuli. Here, we use Rayleigh type surface acoustic wave (SAW) to demonstrate controlled and directional exciton transport under weak coupling regime at room temperature. We screen the in-plane piezoelectric field using photogenerated carriers to study transport under type-I bandgap modulation and measure a maximum exciton drift velocity of 600 m/s. Furthermore, we demonstrate precise steering of exciton flux by controlling the relative phase between the input RF excitation and exciton photogeneration. The results provide important insight into the weak coupling regime between dynamic strain wave and room temperature excitons in a 2D semiconductor system and pave way to exciting applications of excitonic devices in data communication and processing, sensing and energy conversion.

preprint2020arXiv

Exciton Transport under Periodic Potential in MoSe2/WSe2 Heterostructures

The predicted formation of moire superlattices leading to confined excitonic states in heterostructures formed by stacking two lattice mismatched transition metal dichalcogenide (TMD) monolayers was recently experimentally confirmed. Such periodic potential in TMD heterostructure functions as a diffusion barrier that affects the energy transport and dynamics of interlayer excitons (electron and hole spatially concentrated in different monolayers). Understanding the transport of excitons under such condition is essential to establish the material system as a next generation device platform. In this work, we experimentally quantify the diffusion barrier experienced by the interlayer excitons in a hexagonal boron nitride (hBN) encapsulated, molybdenum diselenide tungsten/diselenide (MoSe2/WSe2) heterostructure by studying the exciton transport at various temperatures.