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Researcher profile

Zheng Shu

Zheng Shu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.atom-phphysics.chem-ph

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Published work

6 published item(s)

preprint2022arXiv

Activation of Phosphorene-like Two-dimensional GeSe for Efficient Electrocatalytic Nitrogen Reduction via States Filtering of Ru

Nitrogen reduction reaction (NRR) which converts nitrogen (N2) to ammonia (NH3) normally requires harsh conditions to break the bound nitrogen bond. Herein, via first-principles calculation we reveal that a superior NRR catalytic activity could be obtained through anchoring atomic catalyst above a phosphorene-like puckering surface of germanium selenide (GeSe). Through examining the single- and double- atoms (B, Fe, W, Mo and Ru) decorated on GeSe, we find that its rippled structure allows an intimate contact between the deposited species and the GeSe which significantly promotes the states hybridization. Amongst the various atomic catalyst, we predict that the Ru dimer decorated GeSe monolayer (Ru2@GeSe) has superior catalytic activity for the N2 fixation and reduction. Through examining the three NRR pathways (distal, alternating and enzymatic), the distal and enzymatic pathway is both the thermodynamically favorable with the maximum Gibbs free energy change (ΔGMAX) of 0.25 and 0.26 eV, respectively. Such a superior activity could be attributed to the filtered states of GeSe by Ru dimer which leads to the effective activation of the adsorbed N2 bond. As an efficient near-infrared absorber of GeSe, the Ru mediated hybridization of GeSe-Ru-N2 complex enables an in-gap state which further broadens the absorbing window, rendering for a broadband solar absorption and possible photocatalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells

Lead-free tin-based perovskites are highly appealing for the next generation of solar cells due to their intriguing optoelectronic properties. However, the tendency of Sn2+ oxidation to Sn4+ in the tin-based perovskites induces serious film degradation and performance deterioration. Herein, we demonstrate, through the density functional theory based first-principle calculations in a surface slab model, that the surface defects of the Sn-based perovskite FASnI3 (FA = NH2CHNH2+) could be effectively passivated by the Lewis base molecules. The passivation performance of Lewis base molecules in tin-based perovskite is tightly correlated with their molecular hardness. We reveal that the degree of hardness of Lewis adsorbate governs the stabilization via dual effects: first, changing the stubborn spatial distribution of tin vacancy (VSn) by triggering charge redistribution; second, saturating the dangling states while simultaneously reducing the amounts of deep band gap states. Specifically, the hard Lewis base molecules like edamine (N-donor group) and Isatin-Cl (Cl-donor group) would show a better healing effect than other candidates on the defects-contained tin-based perovskite surface with a somehow hard Lewis acid nature. Our research provides a general strategy for additive engineering and fabricating stable and high-efficiency lead-free Sn-based perovskite solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fast Intercalation of Lithium in Semi-Metallic γ-GeSe Nanosheet: A New Group-IV Monochalcogenide for Lithium-Ion Battery Application

Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far only graphite is satisfying due to its relatively high conductivity. Recently, a new polymorph of layered germanium selenide (Gamma-GeSe) was proven to be semimetal in its bulk phase with a higher conductivity than graphite while its monolayer behaves semiconducting. In this work, by using first-principles calculations, we examined the possibility of using this new group-IV monochalcogenide, Gamma-GeSe, as anode in the Li-ion battery (LIBs). Our studies revealed that Li atom would form an ionic adsorption with adjacent selenium atoms at the hollow site and exist in cationic state (lost 0.89 e to Gamma-GeSe). Results of climbing image-nudged elastic band show the diffusion barrier of Li is 0.21 eV in the monolayer limit, which can activate a relatively fast diffusion even at room temperature on the Gamma-GeSe surface. The calculated theoretical average voltages range from 0.071 to 0.015 V at different stoichiometry of LixGeSe with minor volume variation, suggesting its potential application as anode of LIBs. The predicted moderate binding energy, a low open circuit voltage (comparable to graphite) and a fast motion of Li suggests that Gamma-GeSe nanosheet can be chemically exfoliated via Li intercalation and a promising candidate as the anode material for LIBs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Mutual modulation via charge transfer and unpaired electrons of catalyt-ic site for superior intrinsic activity of N2 reduction: from high-throughput computations assisted with machine learning perspective

Electrocatalysts of nitrogen reduction reaction (NRR) have attracted ever-growing attention due to its application for renewable energy alternative to fossil fuels. However, activation of inert N-N bond requires multiple complex charge injection which complicates the design of the catalysts. Here via combining atomic-scale screening and machine learning (ML) methods we explore the rational design of NRR single-atom catalysts (SACs) supported by molybdenum disulfide (MoS2). Our work reveals that the activity of NRR SACs is highly dependent on the number of unpaired d electrons of TM: positive samples with high activity favoring higher values while negative cases distributing at lower values, both varying with the doping conditions of the host. We find that the substitution of sulfur with boron can activate the intrinsic NRR activity of some TMs such as Ti and V which are otherwise inactive above pristine MoS2. Importantly, among the various de-scriptors used in ML, the charged state of adsorbed TM plays a key role in donating electron to pi-anti-bonding orbital of N2 via the back-donation mechanism. Our work shows a feasible strategy for rational design of NRR SACs and retrieval of the decisive feature of active catalysts.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore monochalcogenide germanium selenide GeSe with respect to substitutional doping with 13 metallic cations by using first-principles calculations. Typical dopants including s-shell (alkali elements Li and Na), p-shell (Al, Pb and Bi), 3d (Fe, Cu, Co and Ni), 4d (Pd and Ag) and 5d (Au and Pt) elements are systematically examined. Amongst all the cationic dopants, Al with the highest oxidation states, implying a high mobility driven by electric field, and Al-doped GeSe may be a promising candidate for novel resistive switching devices. We show that there exist many localized induced states in the band gap of GeSe upon doping Fe, Co, or Ni, while for Cu, Ag, and Au cases there is no such states in the gap. The Ag and Cu are + 0.27 and + 0.35 charged respectively and the positive charges are beneficial for field-driven motion in GeSe. In contrast, Au is slightly negatively charged renders Au-doped GeSe a promising photocatalyst and enhanced surface plasmon. Moreover, we explore the coexistence of dopant and strain in GeSe and find dynamical adjustments of localized states in GeSe with levels successive shifting upward/downward with strain. This induces dynamic oxidative states of the dopants under strain which should be quite popular in composites where motion of metal adatoms causes significant deformation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The effect of Coulomb field on laser-induced ultrafast imaging methods

By performing a joint theoretical and experimental investigation on the high-order above-threshold ionization (HATI) spectrum, the dominant role of the 3rd-return-recollision trajectories in the region near the cutoff due to the ionic Coulomb field is identified. This invalidates the key assumption adopted in the conventional laser-induced electron diffraction (LIED) approach that the 1st-returnrecollision trajectories dominate the spectrum according to strong field approximation (SFA). Our results show that the incident (return) electron beams produced by the 1st and 3rd returns possess distinct characteristics of beam energy, beam diameter and temporal evolution law due to the influence of Coulomb field, and therefore the extracted results in the LIED will be altered if the significance of the 3rd-return-recollision trajectories is properly considered in the analysis. Such Coulomb field effect should be taken into account in all kinds of laser-induced imaging schemes based on recollision.

0 citations0 reviewsNo code linkedOpen access