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Zhehao Ge

Zhehao Ge contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

preprint2022arXiv

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake.

preprint2021arXiv

Quasiparticle interference patterns in bilayer graphene with trigonal warping

We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal warping terms. We introduce four different types of impurities localized on the A and B sublattices of the first and the second layer, and we obtain closed-form analytical expressions both in real and Fourier spaces for the oscillatory corrections to the local density of states generated by the impurities. Finally, we compare our findings with recent experimental and semi-analytical T-matrix results from arXiv:2104.10620 and we show that there is a very good agreement between our findings and the previous results, as well as with the experimental data.

preprint2020arXiv

Determination of the trigonal warping orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy

The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and anisotropic ballistic transport. The absolute orientation of the trigonal warping with respect to the center of the Brillouin zone is however not agreed upon. Here, we use quasiparticle scattering experiments on a gated bilayer graphene/hexagonal boron nitride heterostructure to settle this disagreement. We compare Fourier transforms of scattering interference maps acquired at various energies away from the charge neutrality point with tight-binding-based joint density of states simulations. This comparison enables unambiguous determination of the trigonal warping orientation for bilayer graphene low energy states. Our experimental technique is promising for quasi-directly studying fine features of the band structure of gated two-dimensional materials such as topological transitions, interlayer hybridization, and moiré minibands.