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Zhaopeng Guo

Zhaopeng Guo contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Magnetic band representations, Fu-Kane-like symmetry indicators and magnetic topological materials

To realize novel topological phases and to pursue potential applications in low-energy consumption spintronics, the study of magnetic topological materials is of great interest. Starting from the theory of nonmagnetic topological quantum chemistry [Bradlyn et al., Nature 547, 298 (2017)], we have obtained irreducible (co)representations and compatibility relations (CRs) in momentum space, and we constructed a complete list of magnetic band (co)representations (MBRs) in real space for other MSGs with anti-unitary symmetries (i.e. type-III and type-IV MSGs). The results are consistent with the magnetic topological quantum chemistry [Elcoro et al., Nat. Comm. 12, 5965 (2021)]. Using the CRs and MBRs, we reproduce the symmetry-based classifications for MSGs, and we obtain a set of Fu-Kane-like formulas of symmetry indicators (SIs) in both spinless (bosonic) and spinful (fermionic) systems, which are implemented in an automatic code - TopMat - to diagnose topological magnetic materials. The magnetic topological materials, whose occupied states can not be decomposed into a sum of MBRs, are consistent with nonzero SIs. Lastly, using our online code, we have performed spin-polarized calculations for magnetic compounds in the materials database and find many magnetic topological candidates.

preprint2022arXiv

Quadrupole topological insulators in Ta2M3Te5 (M= Ni, Pd) monolayers

Higher-order topological insulators have been introduced in the precursory Benalcazar-Bernevig-Hughes quadrupole model, but no electronic compound has been proposed to be a quadrupole topological insulator (QTI) yet. In this work, we predict that Ta$_2M_3$Te$_5$ ($M=$ Pd, Ni) monolayers can be 2D QTIs with second-order topology due to the double-band inversion. A time-reversal-invariant system with two mirror reflections (M$_x$ and M$_y$) can be classified by Stiefel-Whitney numbers ($w_1, w_2$) due to the combined symmetry $TC_{2z}$. Using the Wilson loop method, we compute $w_1=0$ and $w_2=1$ for Ta$_2$Ni$_3$Te$_5$, indicating a QTI with $q^{xy}=e/2$. Thus, gapped edge states and localized corner states are obtained. By analyzing atomic band representations, we demonstrate that its unconventional nature with an essential band representation at an empty site, i.e., $A_g@4e$, is due to the remarkable double-band inversion on Y-$Γ$. Then, we construct an eight-band quadrupole model with $M_x$ and $M_y$ successfully for electronic materials. These transition-metal compounds of $A_2M_{1,3}X_5$ ($A$ = Ta, Nb; $M$ = Pd, Ni; $X$ = Se, Te) family provide a good platform for realizing the QTI and exploring the interplay between topology and interactions.

preprint2022arXiv

Unconventional Materials: the mismatch between electronic charge centers and atomic positions

The complete band representations (BRs) have been constructed in the work of topological quantum chemistry. Each BR is expressed by either a localized orbital at a Wyckoff site in real space, or by a set of irreducible representations in momentum space. In this work, we define unconventional materials with a common feature of the mismatch between average electronic centers and atomic positions. They can be effectively diagnosed as whose occupied bands can be expressed as a sum of elementary BRs (eBRs), but not a sum of atomic-orbital-induced BRs (aBRs). The existence of an essential BR at an empty site is described by nonzero real-space invariants (RSIs). The "valence" states can be derived by the aBR decomposition, and unconventional materials are supposed to have an uncompensated total "valence" state. The high-throughput screening for unconventional materials has been performed through the first-principles calculations. We have discovered 423 unconventional compounds, including thermoelectronic materials, higher-order topological insulators, electrides, hydrogen storage materials, hydrogen evolution reaction electrocatalysts, electrodes, and superconductors. The diversity of these interesting properties and applications would be widely studied in the future.

preprint2022arXiv

Unprotected quadratic band crossing points and quantum anomalous Hall effect in FeB2 monolayer

Quadratic band crossing points (QBCPs) and quantum anomalous Hall effect (QAHE) have attracted the attention of both theoretical and experimental researchers in recent years. Based on first-principle calculations, we find that the FeB$_2$ monolayer is a nonmagnetic semimetal with QBCPs at $K$. Through symmetry analysis and $\mathbf{k}\cdot\mathbf{p}$ invariant theory, we find that the QBCP is not protected by rotation symmetry and consists of two Dirac points with same chirality (Berry phase of $2π$). Once introducing Coulomb interactions, we find that there is a spontaneous-time-reversal-breaking instability of the spinful QBCPs, which gives rise to a $C=2$ QAH insulator with orbital moment ordering.

preprint2020arXiv

Dimensionalities and multiplicities determination of crystal nets

Low-dimensional materials have attracted significant attentions over the past decade. To discover new low-dimensional materials, high-throughout screening methods have been applied in different materials databases. For this purpose, the reliability of dimensionality identification is therefore highly important. In this work, we find that the existence of self-penetrating nets may lead to incorrect results by previous methods. In stead of this, we use the quotient graph to analysis the topologies of structures and compute their dimensionalities. Based on the quotient graph, we can calculate not only the dimensionality but also the multiplicity of self-penetrating structures. As a demonstration, we screened the Crystallography Open Database using our method and found hundreds of structures with different dimensionalities and high multiplicities up to eleven.

preprint2020arXiv

Ferromagnetic MnSn monolayer epitaxially grown on silicon substrate

Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important but challenging. In this study, we realized the epitaxial growth of MnSn monolayer on Si(111) substrate, with an atomically thin Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$- buffer layer, and controlled the MnSn thickness with atomic-layer precision. We discovered the ferromagnetism in MnSn monolayer with the Curie temperature (Tc) of ~54 K. As the MnSn film is grown to 4 monolayers, Tc increases accordingly to ~235 K. The lattice of the epitaxial MnSn monolayer as well as the Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$ is perfectly compatible with silicon, and thus an sharp interface is formed between MnSn, Sn and Si. This system provides a new platform for exploring the 2D ferromagnetism, integrating magnetic monolayers into silicon-based technology, and engineering the spintronics heterostructures.