BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Z. Shang

Z. Shang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
astro-ph.SRcond-mat.mes-hallcond-mat.mtrl-sciquant-ph

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

The first flare observation with a new solar microwave spectrometer working in 35-40 GHz

The microwave spectrum contains valuable information about solar flares. Yet, the present spectral coverage is far from complete and broad data gaps exist above 20 GHz. Here we report the first flare (the X2.2 flare on 2022 April 20) observation of the newly-built Chashan Broadband Solar millimeter spectrometer (CBS) working from 35 to 40 GHz. We use the CBS data of the new Moon to calibrate,and the simultaneous NoRP data at 35 GHz to cross-calibrate. The impulsive stage has three local peaks with the middle one being the strongest and the maximum flux density reaches 9300 SFU at 35-40 GHz. The spectral index of the CBS data (alpha_C) for the major peak is mostly positive, indicating the gyrosynchrotron turnover frequency (nu_t) goes beyond 35-40 GHz. The frequency nu_t is smaller yet still larger than 20 GHz for most time of the other two peaks according to the spectral fittings with NoRP-CBS data. The CBS index manifests the general rapid-hardening-then-softening trend for each peak and gradual hardening during the decay stage, agreeing with the fitted optically-thin spectral index (alpha_tn) for nu_t < 35 GHz. In addition, the obtained turnover frequency during the whole impulsive stage correlates well with the corresponding intensity (I_t) according to a power-law dependence (It~nu_t^4.8) with a correlation coefficient of 0.82.This agrees with earlier studies on flares with low turnover frequency (<17 GHz), yet being reported for the first time for events with a high turnover frequency (>20 GHz).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Local vibrational modes of Si vacancy spin qubits in SiC

Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Influence of irradiation on defect spin coherence in silicon carbide

Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.

0 citations0 reviewsNo code linkedOpen access