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Researcher profile

Yvonne J. Hofstetter

Yvonne J. Hofstetter contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Traps and transport resistance: the next frontier for stable state-of-the-art non-fullerene acceptor solar cells

Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Energy Level Alignment in Ternary Organic Solar Cells

Ternary organic solar cells (TOSC) are currently under intensive investigation, recently reaching a record efficiency of 17.1%. The origin of the device open-circuit voltage (VOC), already a multifaceted issue in binary OSC, is even more complex in TOSCs. Herein, we investigate two ternary systems with one donor (D) and two acceptor materials (A1, A2) including fullerene and non-fullerene acceptors. By varying the ratio between the two acceptors, we find the VOC to be gradually tuned between those of the two binary systems, D:A1 and D:A2. To investigate the origin of this change, we employ ultra-violet photoemission spectroscopy (UPS) depth profiling, which is used to estimate the photovoltaic gap in the ternary systems. Our results reveal an excellent agreement between the estimated photovoltaic gap and the VOC for all mixing ratios, suggesting that the energetic alignment between the blend components varies depending on the ratio D:A1:A2. Furthermore, our results indicate that the sum of radiative and non-radiative losses in these ternary systems is independent of the blend composition. Finally, we demonstrate the superiority of UPS over X-ray photoemission spectroscopy (XPS) depth profiling in resolving compositional profiles for material combinations with very similar chemical, but dissimilar electronic structures, as common in TOSCs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhancing the Open-Circuit Voltage of Perovskite Solar Cells by Embedding Molecular Dipoles within their Hole-Blocking Layer

Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (VOC) and consequently, its performance. We explore a series of four thiaazulenic derivatives that exhibit increasing dipole moments and demonstrate that these molecules can be introduced into the solution-processed BCP layer to effectively increase the built-in potential within the device, without altering any of the other device layers. As a result the VOC of the devices is enhanced by up to 130 mV with larger dipoles resulting in higher VOCs. To investigate the limitations of this approach, we employ numerical device simulations that demonstrate that the highest dipole derivatives used in this work eliminate all limitations on the VOC stemming from the built-in potential of the device.

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