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Researcher profile

Yutaka Wakayama

Yutaka Wakayama contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hall

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Published work

4 published item(s)

preprint2020arXiv

Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices based on two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize digital electronics and multifunctional memory applications. Direct bandgap multilayer ReS2 satisfies various requirements as a channel material for electronic devices as well as being a strong light-absorbing layer, which makes it possible to realize light-assisted optoelectronic applications. The non-volatile memory operation with a high ON/OFF current ratio, a large memory window, good endurance (> 1000 cycles) and stable retention (> 104 s) have been observed. We demonstrate successive program and erase states using 10 millisecond gate pulses of +10 V and -10 V, respectively. Laser pulses along with electrostatic gate pulses provide multi-bit level memory access via opto-electrostatic coupling. The devices exhibit the dual functionality of a conventional electronic memory and can store laser-pulse excited signal information for future all-optical logic and quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Light-Assisted and Gate-Tunable Oxygen Gas Sensor based on Rhenium Disulfide (ReS2) Field-Effect Transistors

Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and mechanism have not yet been understood due to the lack of controlled studies. This study systematically investigates the oxygen sensor performance and mechanism of few-layer-thick rhenium disulfide (ReS2) field-effect transistors (FETs) under light illumination and gate biasing. As a result, a combination of light illumination and positive gate voltage enhanced the device responsivity over 100% at a 1% oxygen concentration, that is, the approach achieved a practical sensitivity of 0.01% ppm-1, which outperform over most of the reports available in the literature. Furthermore, the fabricated devices exhibited long-term stability and stable operation even under humid conditions, indicating the ability of the sensor device to operate in a real-time application. These results contribute to the development of versatile tunable oxygen sensors based on TMDC FETs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

MoS2 thin-film transistors spin-states, of conduction electrons and vacancies, distinguished by operando electron spin resonance

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degree of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and vacancies have not been yet elucidated directly from a microscopic viewpoint. We report the spin-states in thin-film electric double-layer transistors using operando electron spin resonance (ESR) spectroscopy. We have observed clearly different ESR signals of the conduction electrons and vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates the lower charge mobilities compared to graphene, which would be useful for improvements of the device characteristics and new applications.

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preprint2020arXiv

Single-Carrier Transport in Graphene/hBN Superlattices

Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on single-carrier transport. The investigation of the single-carrier behavior in these superlattices would lead to an understanding of the transition of single-particle/correlated phenomena. Here, we show the single-carrier transport in a high-quality bilayer graphene/hBN superlattice-based quantum dot device. We demonstrate remarkable device controllability in the energy range near the charge neutrality point (CNP) and the hole-side satellite point. Under a perpendicular magnetic field, Coulomb oscillations disappear near the CNP, which could be a signature of the crossover between Coulomb blockade and quantum Hall regimes. Our results pave the way for exploring the relationship of single-electron transport and fractal quantum Hall effects with correlated phenomena in two-dimensional quantum materials.

0 citations0 reviewsNo code linkedOpen access