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Researcher profile

Yusuf Leblebici

Yusuf Leblebici contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallHardware Architecturephysics.app-ph

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Published work

4 published item(s)

preprint2021arXiv

Modeling Electrical Resistance Drift with Ultrafast Saturation of OTS Selectors

Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit with highly nonlinear current-voltage (I-V) characteristics. Recently, Ovonic Threshold Switching (OTS) materials are preferred as selectors due to their fabrication compatibility with PRAM, MRAM or ReRAM technologies; however, OTS selectors suffer from the temporal drift of its threshold voltage. First, based on Poole-Frenkel conduction, we present time and temperature dependent model that predicts temporally evolving I-V characteristics,including threshold voltage of OTS selectors. Second, we report an ultrafast saturation ($\sim 10^3$ seconds) of the drift and extend the model to predict the time of drift saturation. Our model shows excellent agreement with OTS devices fabricated with 8 nm technology node at 25°C and 85°C ambient temperatures. The proposed model plays a significant role in understanding OTS device internals and the development of reliable threshold voltage jump table.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High-frequency, scaled MoS2 transistors

The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm. In addition, by introducing edge-contacted injection of electrons in trilayer MoS2 devices, we decrease the contact resistance and as a result obtain the highest cutoff frequency of 6 GHz before the de-embedding procedure and 25 GHz after the de-embedding procedure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

MoS2 Transistors Operating at Gigahertz Frequencies

The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits and optoelectronic devices have been demonstrated using ultrathin MoS2, very little is known about their performance at high frequencies where commercial devices are expected to function. Here, we report on top-gated MoS2 transistors operating in the gigahertz range of frequencies. Our devices show cutoff frequencies reaching 6 GHz. The presence of a band gap also gives rise to current saturation, allowing power and voltage gain, all in the gigahertz range. This shows that MoS2 could be an interesting material for realizing high-speed amplifiers and logic circuits with device scaling expected to result in further improvement of performance. Our work represents the first step in the realization of high-frequency analog and digital circuits based on two-dimensional semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Top-Down Design of a Low-Power Multi-Channel 2.5-Gbit/s/Channel Gated Oscillator Clock-Recovery Circuit

We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down to the transistor level, as well as to achieve a power consumption as low as 5mW/Gbit/s. Statistical simulation is used to estimate the achievable bit error rate in presence of phase and frequency errors and to prove the feasibility of the concept. VHDL modeling provides extensive verification of the topology. Thermal noise modeling based on well-known concepts delivers design parameters for the device sizing and biasing. We present two practical examples of possible design improvements analyzed and implemented with this methodology.

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