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Yuri D. Glinka

Yuri D. Glinka appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.app-phquant-ph

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Published work

12 published item(s)

preprint2022arXiv

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi2Se3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi2Se3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (100 fs) pumping pulses of ~340 nm wavelength (~3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi2Se3 films with a thickness of 2 and 5 quintuple layers (~2 and ~5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet-visible spectral region (1.65 - 3.85 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occur in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the surface states, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi2Se3 (2 nm thick film) in the photon energy range (~2.0 - 2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi2Se3 film thickness and pumping power.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Distinguishing between dynamical and static Rashba effects in hybrid perovskite nanocrystals using transient absorption spectroscopy

The dynamical and static Rashba effects in hybrid methylammonium (MA) lead halide perovskites have recently been theoretically predicted. However, only the static effect was experimentally confirmed so far. Here we report on the dynamical Rashba effect observed using snapshot transient absorption spectral imaging with 400 nm pumping for a fully encapsulated film of 20-nm-sized 3D MAPbBr3 nanocrystals. The effect causes a 240 meV splitting of the lowest-energy absorption bleaching band, initially appearing over sub-ps timescale and progressively stabilizing to 60 meV during 500 ps. The integrated intensities of the split subbands demonstrate a photon-helicity-dependent asymmetry, thus proving the Rashba-type splitting and providing direct experimental evidence for the Rashba spin-split edge states in lead halide perovskite materials. The ultrafast dynamics is governed by the relaxation of two-photon-excited electrons in the Rashba spin-split system caused by a built-in electric field originating from dynamical charge separation in the entire MAPbBr3 nanocrystal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural phase transitions and photoluminescence mechanism in a layer of 3D hybrid perovskite nanocrystals

Although the structural phase transitions in single-crystal hybrid methyl-ammonium (MA) lead halide perovskites (MAPbX3, X = Cl, Br, I) are common phenomena, they have never been observed in the corresponding nanocrystals. Here we demonstrate that two-photon-excited photoluminescence (PL) spectroscopy is capable of monitoring the structural phase transitions in MAPbX3 nanocrystals because nonlinear susceptibilities govern the light absorption rates. We provide experimental evidence that the orthorhombic-to-tetragonal structural phase transition in a single layer of 20-nm-sized 3D MAPbBr3 nanocrystals is spread out within the 70 - 140 K range. This structural phase instability range arises because, unlike in single-crystal MAPbX3, free rotations of MA ions in the corresponding nanocrystals are no longer restricted by a long-range MA dipole order. The resulting configurational entropy loss can be even enhanced by the interfacial electric field arising due to charge separation at the MAPbBr3/ZnO heterointerface, extending the orthorhombic-to-tetragonal structural phase instability range from 70 to 230 K. We conclude that the weak sensitivity of conventional one-photon-excited PL spectroscopy to the structural phase transitions in 3D MAPbX3 nanocrystals results from the structural phase instability providing negligible distortions of PbX6 octahedra. In contrast, the intensity of two-photon-excited PL and electric-field-induced one-photon-excited PL still remains sensitive enough to weak structural distortions due to the higher rank tensor nature of nonlinear susceptibilities involved. We also show that room-temperature PL originates from the radiative recombination of the optical-phonon vibrationally excited polaronic quasiparticles with energies might exceed the ground-state Frohlich polaron and Rashba energies due to optical-phonon bottleneck.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x = 0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x = 0.013 - 0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn2+ acceptors and their dimers. The shortest decay-time (~0.75 ps) measured for the film with x = 0.27 suggests a great potential of Mn-doped Bi2Se3 films for applications in high-speed optoelectronic devices. Using Raman spectroscopy exploiting similar laser photon energy (1.58 eV), we demonstrate that due to indirect intersurface coupling in the films, the photoexcited electron trapping in the bulk enhances the electron-phonon interaction strength in Dirac surface states.

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preprint2016arXiv

Nonlinear Optical Observation of Coherent Acoustic Dirac Plasmons in Thin-Film Topological Insulators

Low-energy collective electronic excitations exhibiting sound-like linear dispersion have been intensively studied both experimentally and theoretically for a long time. However, coherent acoustic plasmon modes appearing in time-domain measurements are rarely observed due to Landau damping by the single-particle continua. Here we report on the observation of coherent acoustic Dirac plasmon (CADP) modes excited in indirectly (electrostatically) opposite-surface coupled films of the topological insulator Bi2Se3. Using transient second harmonic generation, a technique capable of independently monitoring the in-plane and out-of-plane electron dynamics in the films, the GHz-range oscillations were observed without corresponding oscillations in the transient reflectivity. These oscillations were assigned to the transverse magnetic and transverse electric guided CADP modes induced by the evanescent guided Lamb acoustic waves and remained Landau undamped due to fermion tunneling between the opposite-surface Dirac states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3

Transient reflectivity traces measured for nanometer-sized films of the topological insulator Bi2Se3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort laser pulses of 1.51 eV photon energy. These oscillations have been suggested to result from acoustic phonon dynamics, including coherent longitudinal acoustic phonons in the form of standing acoustic waves. An increase of oscillation frequency from ~35 to ~70 GHz with decreasing film thickness from 40 to 15 nm was attributed to the interplay between two different regimes employing traveling-acoustic-waves for films thicker than 40 nm and the film bulk acoustic wave resonator (FBAWR) modes for films thinner than 40 nm. The amplitude of oscillations decays rapidly for films below 15 nm thick when the indirect intersurface coupling in Bi2Se3 films switches the FBAWR regime to that of the Lamb wave excitation. The frequency range of coherent longitudinal acoustic phonons is in good agreement with elastic properties of Bi2Se3.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3

Raman measurements of a Fano-type surface phonon mode associated with Dirac surface states (SS) in Bi2Se3 topological insulator thin films allowed an unambiguous determination of the electron-phonon coupling strength in Dirac SS as a function of film thickness ranging from 2 to 40 nm. A non-monotonic enhancement of the electron-phonon coupling strength with maximum for the 8 - 10 nm thick films was observed. The non-monotonicity is suggested to originate from plasmon-phonon coupling which enhances electron-phonon coupling when free carrier density in Dirac SS increases with decreasing film thickness and becomes suppressed for thinnest films when anharmonic coupling between in-plane and out-of-plane phonon modes occurs. The observed about four-fold enhancement of electron-phonon coupling in Dirac SS of the 8 - 10 nm thick Bi2Se3 films with respect to the bulk samples may provide new insights into the origin of superconductivity in this-type materials and their applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonance-type thickness dependence of optical second harmonic generation in thin-films of the topological insulator Bi2Se3

Optical second harmonic generation (SHG) has been measured for the first time in reflection from the nanometer-thick films (6 to 40 nm) of the topological insulator Bi2Se3 using 1.51 eV (820 nm) Ti:Sapphire laser photons and revealed a strong dependence of the integral SHG intensity on the film thickness. The integral SHG intensity was determined by area integration of the SHG rotational anisotropy patterns measured for different input-output light polarization geometries. A ~100-fold enhancement of the integral SHG intensity with decreasing film thickness has been suggested to result from the DC-electric-field-induced SHG (EFISHG) effects. Two sources of dynamically created DC electric field were proposed: (i) the capacitor-type DC electric field that gradually increases with decreasing film thickness from 40 to 6 nm due to a dynamical imbalance of photoexcited long-lived carriers between the opposite-surface Dirac surface states and (ii) an DC electric field associated with a nonlinearly excited Dirac plasmon, which is responsible for the resonant enhancement of the integral SHG intensity for the 10 nm thick film with a Lorentz-shaped resonance of ~1.6 nm full width at half maximum. Additionally to the general SHG enhancement trends with decreasing film thickness, a relative decrease of the out-of-plane contribution with respect to the in-plane contribution was observed. Using a theoretical treatment of the measured SHG rotational anisotropy patterns, this effect has been suggested to result from the joint contributions of the linear and quadratic DC electric field effects to the EFISHG response.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3

We report on a >100-fold enhancement of Raman responses from Bi2Se3 thin films if laser photon energy switches from 2.33 eV (532 nm) to 1.58 eV (785 nm), which is due to direct optical coupling to Dirac surface states (SS) at the resonance energy of ~1.5 eV (a thickness-independent enhancement) and due to nonlinearly excited Dirac plasmon (a thickness-dependent enhancement). Owing to the direct optical coupling, we observed an in-plane phonon mode of hexagonally arranged Se-atoms associated with a continuous network of Dirac SS. This mode revealed a Fano lineshape for films <15 nm thick, resulting from quantum interference between surface phonon and Dirac plasmon states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ~20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation dynamics are similar to those of bulk Bi2Se3, where the contribution of the bulk insulating phase dominates over that of the surface metallic phase. The carrier relaxation time shortens with decreasing film thickness, reaching values comparable to those of noble metals. This effect may result from the hybridization of Dirac cone states at the opposite surfaces for the thinnest films.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of Monolayer Thickness Fluctuations on Coherent Exciton Coupling in Single Quantum Wells

Monolayer fluctuations in the thickness of a semiconductor quantum well (QW) lead to three types of excitons, located in the narrower, average and thicker regions of the QW, which are clearly resolved in optical spectra. Whether or not these excitons are coherently coupled via Coulomb interactions is a long-standing debate. We demonstrate that different types of disorder in QWs distinctly affects the coherent coupling and that the coupling strength can be quantitatively measured using optical two-dimensional Fourier transform spectroscopy. We prove experimentally and theoretically that in narrow quantum wells the coherent coupling occurs predominantly between excitons residing in the disorder-free areas of the QWs and those residing in the plateau-type disorder. In contrast, excitons localized in the fault-type disorder potentials do not coherently couple to other excitons.

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