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Yung Woo Park

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Published work

3 published item(s)

preprint2014arXiv

Random telegraph noise in metallic single-walled carbon nanotubes

We have investigated random telegraph noise (RTN) observed in individual metallic carbon nanotubes (CNTs). Mean lifetimes in high- and low-current states, shigh and slow, have been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the statistics and features of the RTN, we suggest that this noise is due to the random transition of defects between two metastable states, activated by inelastic scattering with conduction electrons. Our results indicate an important role of defect motions in the 1=f noise in CNTs.

preprint2014arXiv

Scalable Production of Highly-Sensitive Nanosensors Based on Graphene Functionalized with a Designed G Protein-Coupled Receptor

We have developed a novel, all-electronic biosensor for opioids that consists of an engineered mu opioid receptor protein, with high binding affinity for opioids, chemically bonded to a graphene field-effect transistor to read out ligand binding. A variant of the receptor protein that provided chemical recognition was computationally redesigned to enhance its solubility and stability in an aqueous environment. A shadow mask process was developed to fabricate arrays of hundreds of graphene transistors with average mobility of ~1500 cm2 V-1 s-1 and yield exceeding 98%. The biosensor exhibits high sensitivity and selectivity for the target naltrexone, an opioid receptor antagonist, with a detection limit of 10 pg/mL.

preprint2007arXiv

Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors

We use scanning photocurrent microscopy (SPCM) to investigate the properties of internal p-n junctions as well as local defects in ambipolar carbon nanotube (CNT) transistors. Our SPCM images show strong signals near metal contacts whose polarity and positions change depending on the gate bias. SPCM images analyzed in conjunction with the overall conductance also indicate the existence and gate-dependent evolution of internal p-n junctions near contacts in the n-type operation regime. To determine the p-n junction position and the depletion width with a nanometer scale resolution, a Gaussian fit was used. We also measure the electric potential profile of CNT devices at different gate biases, which shows that both local defects and induced electric fields can be imaged using the SPCM technique. Our experiment clearly demonstrates that SPCM is a valuable tool for imaging and optimizing electrical and optoelectronic properties of CNT based devices.