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Researcher profile

Yuanyue Liu

Yuanyue Liu contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

11 published item(s)

preprint2016arXiv

Origin of low sodium capacity in graphite and generally weak substrate binding of Na and Mg among alkali and alkaline earth metals

It is well known that graphite has a low capacity for Na but a high capacity for other alkali metals. The growing interest in alternative cation batteries beyond Li makes it particularly important to elucidate the origin of this behavior, which is not well understood. In examining this question, we find a quite general phenomenon: among the alkali and alkaline earth metals, Na and Mg generally have the weakest chemical binding to a given substrate, compared with the other elements in the same column of the periodic table. We demonstrate this with quantum mechanics calculations for a wide range of substrate materials (not limited to C) covering a variety of structures and chemical compositions. The phenomenon arises from the competition between trends in the ionization energy and the ion-substrate coupling, down the columns of the periodic table. Consequently, the cathodic voltage for Na and Mg is expected to be lower than those for other metals in the same column. This generality provides a basis for analyzing the binding of alkali and alkaline earth metal atoms over a broad range of systems.

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preprint2016arXiv

Two-dimensional Halide Perovskites: Tuning Electronic Activities of Defects

Two-dimensional (2D) halide perovskites are emerging as promising candidates for nano-electronics and optoelectronics. To realize their full potential, it is important to understand the role of those defects that can strongly impact material properties. In contrast to other popular 2D semiconductors (e.g. transition metal dichalcogenides MX2) for which defects typically induce harmful traps, we show that the electronic activities of defects in 2D perovskites are significantly tunable. For example, even with a fixed lattice orientation, one can change the synthesis conditions to convert a line defect (edge or grain boundary) from electron acceptor to inactive site without deep gap states. We show that this difference originates from the enhanced ionic bonding in these perovskites compared with MX2. The donors tend to have high formation energies, and the harmful defects are difficult to form at a low halide chemical potential. Thus we unveil unique properties of defects in 2D perovskites and suggest practical routes to improve them.

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preprint2016arXiv

Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier

Two-dimensional (2D) semiconductors have shown great promise in (opto)electronic applications. However, their developments are limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals due to the strong Fermi level pinning (FLP) effect. Here we show that, this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interaction. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (e.g. H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions, but also uncovers great potential of 2D metals in device applications.

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preprint2015arXiv

Air passivation of chalcogen vacancies in two-dimensional semiconductors

Defects play important roles in semiconductors (SCs). Unlike those in bulk SCs, defects in two-dimensional (2D) SCs are exposed to the surrounding environment, which can potentially modify their properties/functions. Air is a common environment; yet its impact on the defects in 2D SCs still remains elusive. In this work, we unravel the interaction between air and chalcogen vacancies (VX)-the most typical defects in 2D SCs. We find that, although the interaction is weak for most molecules in air, O2 can be chemisorbed at VX with a barrier that correlates with the SC cohesive energy and can be overcame even at room temperature for certain SCs. Importantly, the chemisorbed O2 changes the VX from commonly-believed harmful carrier-traps to electronically benign sites. This unusual behavior originates from the iso-valence between O2 and X when bonded with metal. Based on these findings, we propose a facile approach to improve the performance of 2D SCs by using air to passivate the defects.

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preprint2014arXiv

Assessing carbon-based anodes for lithium-ion batteries: A universal description of charge-transfer binding

Many key performance characteristics of carbon-based lithium-ion battery anodes are largely determined by the strength of binding between lithium (Li) and sp2 carbon (C), which can vary significantly with subtle changes in substrate structure, chemistry, and morphology. Here, we use density functional theory calculations to investigate the interactions of Li with a wide variety of sp2 C substrates, including pristine, defective, and strained graphene; planar C clusters; nanotubes; C edges; and multilayer stacks. In almost all cases, we find a universal linear relation between the Li-C binding energy and the work required to fill previously unoccupied electronic states within the substrate. This suggests that Li capacity is predominantly determined by two key factors -- namely, intrinsic quantum capacitance limitations and the absolute placement of the Fermi level. This simple descriptor allows for straightforward prediction of the Li-C binding energy and related battery characteristics in candidate C materials based solely on the substrate electronic structure. It further suggests specific guidelines for designing more effective C-based anodes. The method should be broadly applicable to charge-transfer adsorption on planar substrates, and provides a phenomenological connection to established principles in supercapacitor and catalyst design.

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preprint2013arXiv

Feasibility of Lithium Storage on Graphene and Its Derivatives

Nanomaterials are anticipated to be promising storage media, owing to their high surface-to-mass ratio. The high hydrogen capacity achieved by using graphene has reinforced this opinion and motivated investigations of the possibility to use it to store another important energy carrier - lithium (Li). While the first-principles computations show that the Li capacity of pristine graphene, limited by Li clustering and phase separation, is lower than that offered by Li intercalation in graphite, we explore the feasibility of modifying graphene for better Li storage. It is found that certain structural defects in graphene can bind Li stably, yet more efficacious approach is through substitution doping with boron (B). In particular, the layered C3B compound stands out as a promising Li storage medium. The monolayer C3B has a capacity of 714 mAh/g (as Li1.25C3B), and the capacity of stacked C3B is 857 mAh/g (as Li1.5C3B), which is about twice as large as graphite's 372 mAh/g (as LiC6). Our results help clarify the mechanism of Li storage in low-dimensional materials, and shed light on the rational design of nano-architectures for energy storage.

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preprint2013arXiv

Probing the Synthesis of Two-Dimensional Boron by First-Principles Computations

Boron synthesis, in theory: Although two-dimensional boron sheets have attracted considerable interest because of their theoretically predicted properties, synthesis of such sheets remains a challenge. The feasibility of different synthetic methods for two-dimensional boron sheets was assessed using first-principles calculations, possibly paving the way towards its application in nanoelectronics.

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preprint2012arXiv

Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride

A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable homo-elemental bonds. Based on the structures of dislocations, grain boundaries (GB) in BN are investigated. Depending on the tilt angle of grains, GB can be either polar (B-rich or N-rich), constituted by 5|7s, or un-polar, composed of 4|8s. The polar GBs carry net charges, positive at B-rich and negative at N-rich ones. In contrast to GBs in graphene which generally impede the electronic transport, polar GBs have smaller bandgap compared to perfect BN, which may suggest interesting electronic and optic applications.

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preprint2011arXiv

BN white graphene with `colorful' edges--the energies and morphology

Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions, and to engineer their electronic and magnetic properties.

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preprint2010arXiv

Cones, pringles, and grain boundary landscapes in graphene topology

A polycrystalline graphene consists of perfect domains tilted at angle α to each other and separated by the grain boundaries (GB). These nearly one-dimensional regions consist in turn of elementary topological defects, 5-pentagons and 7-heptagons, often paired up into 5-7 dislocations. Energy G(α) of GB computed for all range 0<=α<=Pi/3, shows a slightly asymmetric behavior, reaching ~5 eV/nm in the middle, where the 5&#39;s and 7&#39;s qualitatively reorganize in transition from nearly armchair to zigzag interfaces. Analysis shows that 2-dimensional nature permits the off-plane relaxation, unavailable in 3-dimensional materials, qualitatively reducing the energy of defects on one hand while forming stable 3D-landsapes on the other. Interestingly, while the GB display small off-plane elevation, the random distributions of 5&#39;s and 7&#39;s create roughness which scales inversely with defect concentration, h ~ n^(-1/2)

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preprint2010arXiv

Graphene edge from A to Z - and the origins of nanotube chirality

The energy of arbitrary graphene edge is derived in analytical form. It contains a &#34;chemical phase shift&#34;, determined by the chemical conditions at the edge. Direct atomistic computations support the universal nature of the relationship. Definitive for graphene formation, shapes of the voids or ribbons, this has further important implications for nanotube chirality selection and control by chemical means, at the nucleation stage.

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