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Yuanxu Wang

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cond-mat.mtrl-sci astro-ph.CO cond-mat.mes-hall hep-ph

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preprint2016arXiv

Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom

Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of the energetically metastable states for an interstitial sulfur atom inside crystalline silicon. Finally, we obtain sixty-three metastable interstitial states and they can be classified into ten types. Interestingly, twenty-eight (44% in total) of lower-energy metastable states can produce a well-isolated and half-filled intermediate band (IB) inside silicon forbidden gap, which makes sulfur hyperdoped silicon to be a desirable material for IB solar cells.

preprint2016arXiv

Sensitivity of the CUORE detector to $14.4$ keV solar axions emitted by the M1 nuclear transition of$~^{57}$Fe

In this paper we present a calculation of the sensitivity of the CUORE detector to the monoenergetic $14.4$ keV solar axions emitted by the M1 nuclear transition of$~^{57}$Fe in the Sun and detected by inverse coherent Bragg-Primakoff conversion in single-crystal $TeO_2$ bolometers. The expected counting rate is calculated using density functional theory for the electron charge density of $TeO_2$ and realistic background and energy resolution of CUORE. Monte Carlo simulations for $5$ y $\times$ $741$ kg=$3705-$kg$\cdot$y of exposure are analyzed using time correlation of individual events with the theoretical time-dependent counting rate. We find an expected model-independent limit on the product of the axion-photon coupling and the axion-nucleon coupling $g_{aγγ}g_{aN}^{\text{eff}}<1.105\times 10^{-16}$ /GeV for axion masses less than 500 eV with $95\%$ confidence level.

preprint2015arXiv

Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements endowed the treated silicon with a strong and wide sub-bandgap light absorptance. When these hyperdoped silicons were thermally annealed even at low temperatures (such as 200~400 oC), however, this extra sub-bandgap absorptance began to attenuate. In order to explain this attenuation of absorptance, alternatively, we consider it corresponding to a chemical decomposition reaction from optically absorbing structure to non-absorbing structure, and obtain a very good fitting to the attenuated absorptances by using Arrhenius equation. Further, we extract the reaction activation energies from the fittings and they are 0.343(+/- 0.031) eV for S-, 0.426(+/-0.042) eV for Se-, and 0.317(+/-0.033) eV for Te-hyperdoped silicon, respectively. We discuss these activation energies in term of the bond energies of chalcogen-Si metastable bonds, and finally suggest that several high-energy interstitial sites instead of the substitutional site, are very possibly the atomic structures that are responsible for the sub-bandgap absorptance of chalcogen hyperdoped silicon.

preprint2015arXiv

The origin of the unusual anisotropic electrical conductivity of Ba3Al2As4

Ba3Al2As4 exhibits an unusual anisotropic electrical conductivity, that is, the electrical conductivity along the chain is smaller than those along other two directions which conflicts previous conclusion. Earlier studies on Ca5M2Pn6 showed a high electrical conductivity along the chain. The band decomposed charge density is used to explain such unusual behavior. The results indicate that the existence of a conductive pathway near the Fermi level is responsible for the electrons transport. Further, the Ba-As bonding of Ba3Al2As4 is some degree covalency which is novel for the Zintl compounds.

preprint2014arXiv

Optical and electrical properties of textured sulfur hyperdoped silicon: a thermal annealing study

When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the other hand, the local Si: S configuration that can contribute to the strong sub-bandgap absorption is still unknown. In order to find more characteristics of this local Si:S configuration, we thermally annealed the textured sulfur hyperdoped silicon, and analyzed the changes of its optical and electrical properties. We find that the imaginary part of the complex dielectric constant of this Si:S configuration is almost constant in the wavelength range from 1250 nm to 2500 nm ...