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Researcher profile

Yuan Xiang

Yuan Xiang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scimath.CO

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Published work

2 published item(s)

preprint2020arXiv

Counting generalized Schröder paths

A Schröder path is a lattice path from $(0,0)$ to $(2n,0)$ with steps $(1,1)$, $(1,-1)$ and $(2,0)$ that never goes below the $x-$axis. A small Schröder path is a Schröder path with no $(2,0)$ steps on the $x-$axis. In this paper, a 3-variable generating function $R_L(x,y,z)$ is given for Schröder paths and small Schröder paths respectively. As corollaries, we obtain the generating functions for several kinds of generalized Schröder paths counted according to the order in a unified way.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultrafast Photoinduced Band Splitting and Carrier Dynamics in Chiral Tellurium Nanosheets

Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H4 and H5 and the degenerate H6 valence bands (VB) and the lowest degenerate H6 conduction band (CB) as well as a higher energy transition at the L-point. Surprisingly, the degeneracy of the H6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.

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