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Yu-Jun Zhao

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cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

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preprint2026arXiv

Slow growth of quantum magic in disorder-free Stark many-body localization

Disorder-free quantum many-body localization can strongly suppress transport while still enabling the dynamical buildup of computationally costly non-Clifford resources. In a tilted transverse-field Ising chain realizing disorder-free Stark many-body localization, we use the stabilizer Rényi entropy to quantify quantum magic (nonstabilizerness) and find that it remains finite and grows anomalously slowly over extended time windows before saturating to a size-dependent plateau deep in the strong-tilt regime, with pronounced initial-state selectivity. Upon increasing the Stark gradient, the long-time magic and half-chain entanglement exhibit consistent finite-size crossing behavior, indicating a crossover from ergodic dynamics to constrained localization. These results establish stabilizer-based magic as a practical complexity diagnostic of disorder-free ergodicity breaking and constrained dynamics, and provide an experimentally accessible route to benchmarking and designing near-term quantum simulators.

preprint2022arXiv

Determining ground states of alloy by a symmetry-based classification

Reducing the number of candidate structures is crucial to improve the efficiency of global optimization. Herein, we demonstrate that the generalized Hamiltonian can be described by the atom classification model (ACM) based on symmetry, generating competent candidates for the first-principles calculations to determine ground states of alloy directly. The candidates can be obtained in advance through solving the convex hull step by step, because the correlation functions of ACM can be divided into various subspace according to the defined index $l$. As an important inference, this index can be converted to the number of Wyckoff positions, revealing the dominant effect of geometry symmetry on structural stability. Taking Ni-Pt, Ag-Pd, Os-Ru, Ir-Ru and Mo-Ru as examples, we not only identify the stable structures in previous theoretical and experimental results, but also predict a dozen of configurations with lower formation energies, such as Ag$_{0.5}$Pd$_{0.5}$ ($Fd$-$3m$), Os$_{0.5}$Ru$_{0.5}$ ($Pnma$), Ir$_{1/3}$Ru$_{2/3}$ ($P6_{3}/mmc$), and Mo$_{0.25}$Ru$_{0.75}$ ($Cmcm$).

preprint2022arXiv

Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures

Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.

preprint2020arXiv

Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe$_3$GeTe$_2$ Nanoflakes

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (Vg>4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.

preprint2016arXiv

Minimum Vertex-type Sequence Indexingfor Clusters on Square Lattice

An effective indexing scheme for clusters that enables fast structure comparison and congruence check is desperately desirable in the field of mathematics, artificial intelligence, materials science, etc. Here we introduce the concept of minimum vertex-type sequence for the indexing of clusters on square lattice, which contains a series of integers each labeling the vertex type of an atom. The minimum vertex-type sequence is orientation independent, and it builds a one-to-one correspondence with the cluster. By using minimum vertex-type sequence for structural comparison and congruence check, only one type of data is involved, and the largest amount of data to be compared is n pairs, n is the cluster size. In comparison with traditional coordinate-based methods and distance-matrix methods, the minimum vertex-type sequence indexing scheme has many other remarkable advantages. Furthermore, this indexing scheme can be easily generalized to clusters on other high-symmetry lattices. Our work can facilitate cluster indexing and searching in various situations, it may inspire the search of other practical indexing schemes for handling clusters of large sizes.

preprint2014arXiv

Quasilattice-conserved optimization of the atomic structure of decagonal Al-Co-Ni quasicrystals

The detailed atomic structure of quasicrystals has been an open question for decades. Here, we present a quasilattice-conserved optimization method (quasiOPT), with particular quasiperiodic boundary conditions. As the atomic coordinates described by basic cells and quasilattices, we are able to maintain the self-similarity characteristics of qusicrystals with the atomic structure of the boundary region updated timely following the relaxing region. Exemplified with the study of decagonal Al-Co-Ni (d-Al-Co-Ni), we propose a more stable atomic structure model based on Penrose quasilattice and our quasiOPT simulations. In particular, "rectangle-triangle" rules are suggested for the local atomic structures of d-Al-Co-Ni quasicrystals.

preprint2014arXiv

Theoretical search for half-Heusler topological insulators

We have performed ab-initio band structure calculations on more than two thousand half-Heusler compounds in order to search for new candidates for topological insulators. Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gap of 0.20 and 0.19 eV, respectively, different from the zero band gap feature reported in other Heusler topological insulators. Due to the inversion asymmetry of the Heusler structure, their topological surface states on the top and bottom surfaces exhibit p-type and n-type carriers, respectively. Thus, these materials may serve as an ideal platform for the realization of topological magneto-electric effects as polar topological insulators. Moreover, these topological surface states exhibit the right-hand spin-texture in the upper Dirac cone, which distinguish them from currently known topological insulator materials. Their topological nontrivial character remains robust against in-plane strains, which makes them suitable for epitaxial growth of films.

preprint2010arXiv

Stability of hydrogenated group-IV nanostructures: magic structures of diamond nanocrystals and Silicon quantum dots

We have developed an effective model to investigate the energetic stability of hydrogenated group-IV nanostructures, followed by validations from first-principles calculations. It is found that the Hamiltonian of X$_{m}$H$_{n}$ (X=C, Si, Ge and Sn) can be expressed analytically by a linear combination of the atom numbers ($m$, $n$), indicating a dominating contribution of X$-$X and X$-$H local interactions. As a result, we explain the stable nanostructures observed experimentally, and provide a reliable and efficient technique of searching the magic structures of diamond nanocrystals(Dia-NCs) and Silicon quantum dots(SiQDs).

preprint2009arXiv

The origin of p-type conduction in (P, N) co-doped ZnO

P mono-doped and (P, N) co-doped ZnO are investigated by the first-principles calculations. It is found that substitutive P defect forms a deep acceptor level at O site (PO) and it behaves as a donor at Zn site (PZn), while interstitial P (Pi) is amphoteric. Under equilibrium conditions, these defects contribute little to the p-type conductivity of ZnO samples since the formation energy of PZn is much lower than that of Pi or PO when EF is below mid-gap (a prerequisite p-type condition). Zinc vacancies (VZn) and PZn-2VZn complex are demonstrated to be shallow acceptors with ionization energies around 100 meV, but they are easily compensated by PZn defect. Fortunately, PZn-4NO complexes may have lower formation energy than that of PZn under Zn rich condition by proper choices of P and N sources. In addition, the neutral PZn-3NO passive defects may form an impurity band right above the valence band maximum of ZnO as in earlier reported (Ga,N) or (Zr,N) doped ZnO. This significantly reduces the acceptor level of PZn-4NO complexes, and helps improving the p-type conductivity in ZnO.